WHY THE PHOTOCONDUCTIVITY DECREASES IN A-SIC-H AND A-SIGE-H WHEN THE AMOUNT OF ALLOYING INCREASES

被引：9

作者：

MAHAN, AH

RABOISSON, P

MENNA, P

MASCARENHAS, A

TSU, R

机构：

[1] CNRS, F-6500 VALBONNE, FRANCE

[2] ENTE NAZL ENERGIA ATOM, FARE FOTO, I-80055 PORTICI, ITALY

[3] N CAROLINA AGR & TECH STATE UNIV, DEPT ELECT ENGN, GREENSBORO, NC 27411 USA

来源：

SOLAR CELLS | 1988年 / 24卷 / 1-2期

关键词：

D O I：

10.1016/0379-6787(88)90049-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：195 / 203

页数：9

共 18 条

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[8] EVIDENCE FOR MICROSTRUCTURE IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS SI-C ALLOYS [J].

MAHAN, AH ;

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TSU, R .

SOLAR CELLS, 1987, 21 :117-126

[9] INFLUENCE OF MICROSTRUCTURE ON THE PHOTOCONDUCTIVITY OF GLOW-DISCHARGE DEPOSITED AMORPHOUS SIC-H AND AMORPHOUS SIGE-H ALLOYS [J].

MAHAN, AH ;

RABOISSON, P ;

TSU, R .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :335-337

[10] INFLUENCE OF MICROSTRUCTURE ON THE URBACH EDGE OF AMORPHOUS SIC-H AND AMORPHOUS SIGE-H ALLOYS [J].

MAHAN, AH ;

MENNA, P ;

TSU, R .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1167-1169

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