PHOTOREDUCTION AND OXIDATION OF AMORPHOUS INDIUM OXIDE

被引:34
作者
PASHMAKOV, B [1 ]
CLAFLIN, B [1 ]
FRITZSCHE, H [1 ]
机构
[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637
基金
美国国家科学基金会;
关键词
D O I
10.1016/0038-1098(93)90826-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Exposure to hupsilon > 3 eV light of amorphous InO(x) films in vacuum or an inert gas causes outdiffusion of oxygen and an increase in conductivity to more than 5x10(2) OMEGA-1cm-1. The same films can be reoxidized, for example by ozone, to obtain conductivities less than 10(-4) OMEGA-1cm-1 at 300 K. Photoreduction and oxidation can change the conduction properties of one and the same film in a reproducible manner.
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页码:619 / 622
页数:4
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