EFFECTS OF UNIAXIAL COMPRESSIVE STRESS ON MINORITY-CARRIER LIFETIME IN SILICON AND GERMANIUM

被引：7

作者：

SLOAN, BJ

HAUSER, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 08期

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D O I：

10.1063/1.1659449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3504 / &

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共 9 条

[1] PROPERTIES OF SILICON AND GERMANIUM .2.
CONWELL, EM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300
[2] EFFECT OF STRESS ON GERMANIUM AND SILICON P-N JUNCTIONS
KANDA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 475 - &
[3] MINORITY CARRIER LIFETIME IN UNIAXIALLY STRESSED GERMANIUM
MATUKURA, Y
MIURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) : 72 - &
[4] EFFECTS OF UNIAXIAL AND INHOMOGENEOUS STRESS IN GERMANIUM AND SILICON P-N JUNCTIONS
RINDNER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2513 - &
[5] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[6] SLOAN BJ, 1968, THESIS NC STATE U
[7] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER
WATKINS, GD
CORBETT, JW
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &
[8] EFFECT OF UNIFORM STRESS ON SI P-N JUNCTIONS
WOOTEN, FT
BROOKS, AD
WORTMAN, JJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (07): : 1221 - &
[9] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS
WORTMAN, JJ
BURGER, RM
HAUSER, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2122 - &