SUBSTRATE CURRENT CHARACTERISTIC OF SI NMOSTS AND PMOSTS AT 4.2-K

被引：9

作者：

SIMOEN, E

CLAEYS, C

机构：

[1] IMEC, B-3001 Leuven

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 05期

关键词：

D O I：

10.1016/0038-1098(92)90364-F

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The substrate current characteristics of Si N- and PMOSTs, operating at 4.2 K am reported and compared with room temperature and 77 K. It is demonstrated that the semi-empirical model, which has been developed for higher temperatures can be extrapolated down to 4.2 K. An appropriate, empirical method will be described to determine the saturation voltage of NMOSTs at liquid helium temperatures (LHT), an essential parameter for the substrate current modelling.

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页码：341 / 343

页数：3

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