THE IMPORTANCE OF THE INTERNAL BULK-SOURCE POTENTIAL ON THE LOW-TEMPERATURE KINK IN NMOSTS

被引：20

作者：

DEFERM, L

SIMOEN, E

CLAEYS, C

机构：

[1] IMEC., Kapeldreef 75

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/16.81639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the kink occurring at low temperatures in the I(DS)-V(DS) curves of NMOS transistors is explained by the direct correlation between the current injected into the source, the internal bulk potential, and the resulting change in threshold voltage. A semi-two-dimensional analytical model is derived for calculating the influence of the multiplication current from room temperature down to liquid helium temperature.

引用

收藏

页码：1459 / 1466

页数：8

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