NUMERICAL AND ANALYTICAL MODELING OF NON OHMIC MOSFET OPERATION AT LIQUID-HELIUM TEMPERATURE

被引：4

作者：

HAFEZ, IM

GHIBAUDO, G

BALESTRA, F

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 10期

关键词：

D O I：

10.1016/0038-1101(89)90063-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：861 / 865

页数：5

共 17 条

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[7] AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR ENHANCED-MODE MOSFETS [J].

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[8] A METHOD FOR MOSFET PARAMETER EXTRACTION AT VERY LOW-TEMPERATURE [J].

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[9] A SIMPLE-MODEL OF THE DRAIN SATURATION VOLTAGE DEPENDENCE WITH GATE VOLTAGE FOR SHORT-CHANNEL MOSFETS [J].

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