TRANSPORT IN THE INVERSION LAYER OF A MOS-TRANSISTOR - USE OF KUBO-GREENWOOD FORMALISM

被引：27

作者：

GHIBAUDO, G

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 05期

关键词：

D O I：

10.1088/0022-3719/19/5/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：767 / 780

页数：14

共 26 条

[1] THRESHOLD CONDUCTION IN INVERSION LAYERS [J].

ADKINS, CJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (05) :851-883

[2] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[3]

ARNOLD E, 1974, APPL PHYS LETT, V25, P706

[4]

BACCARANI G, 1982, 1982 IEDM TECH DIG, P278

[5] THEORY OF CARRIER-DENSITY FLUCTUATIONS IN AN IGFET NEAR THRESHOLD [J].

BREWS, JR .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2181-2192

[6] CARRIER-DENSITY FLUCTUATIONS AND IGFET MOBILITY NEAR THRESHOLD [J].

BREWS, JR .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2193-2203

[7] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES [J].

CHEN, JTC ;

MULLER, RS .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :828-834

[8]

DUGDALE JS, 1977, ELECTRICAL PROPERTIE

[9] INVERSION LAYER MOBILITY WITH INTERSUBBAND SCATTERING [J].

EZAWA, H .

SURFACE SCIENCE, 1976, 58 (01) :25-32

[10] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

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