A METHOD FOR MOSFET PARAMETER EXTRACTION AT VERY LOW-TEMPERATURE

被引：31

作者：

GHIBAUDO, G ^{[1
]}

BALESTRA, F ^{[1
]}

机构：

[1] SACHS & FREEMAN ASSOCIATES INC, LANDOVER, MD 20785 USA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 03期

关键词：

D O I：

10.1016/0038-1101(89)90095-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：221 / 223

页数：3

共 9 条

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[8] ELECTRON-MOBILITY IN SHORT-CHANNEL MOSFETS WITH SERIES RESISTANCES [J].

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[9] A NEW AC MEASUREMENT TECHNIQUE TO ACCURATELY DETERMINE MOSFET CONSTANTS [J].

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