APPLICATION OF DEFECT RELATED GENERATION CURRENT FOR LOW-DOSE ION-IMPLANTATION MONITORING

被引：3

作者：

HAZDRA, P ^{[1
]}

HASLAR, V ^{[1
]}

VOBECKY, J ^{[1
]}

机构：

[1] ACAD SCI CZECH REPUBL,INST PHYS,CR-18040 PRAGUE 8,CZECH REPUBLIC

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00462-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The application of the reverse current I, of an implantation damaged diode for low-dose ion implantation monitoring is presented. A linear dose dependence of reverse current was found far H-1(+) 200 keV, He-4(+) 200 keV, B-11(+) 40 keV. and Si-28(+) implants within the dose range 5 x 10(9)-1 x 10(12) cm(-2). The temperature and time stability of the current I-r and the influence of implantation conditions on its magnitude were studied experimentally and analysed by means of numerical simulations. The results showed that I-r may change considerably with time and temperature mainly due to the dissociation of unstable VP pairs. It was shown that the method may be useful for very low-dose uniformity mapping of ultra-deep implants.

引用

页码：104 / 108

页数：5

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