ELECTRON-TRANSPORT OF INHOMOGENEOUS SCHOTTKY BARRIERS

被引：307

作者：

TUNG, RT

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 24期

关键词：

D O I：

10.1063/1.104747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel approach is presented which leads to analytic solutions to the potential and the electron transport through inhomogeneous Schottky barriers. The existence of barrier height nonuniformities is shown to provide a simple explanation of the following abnormal experimental results, routinely observed from various Schottky barriers: greater-than-unity ideality factors, the T0 effect, the "soft" reverse characteristics, and the dependence of barrier height on the technique of measurement.

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页码：2821 / 2823

页数：3

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