ELECTRONIC-STRUCTURE OF SI-DISILICIDE INTERFACES

被引：16

作者：

FUJITANI, H ^{[1
]}

ASANO, S ^{[1
]}

机构：

[1] UNIV TOKYO, COLL ARTS & SCI, INST PHYS, MEGURO KU, TOKYO 153, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90050-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using supercells, the electronic structures of Si(111)/CoSi2 and Si(111)/NiSi2 interfaces are studied by the linear muffin-tin orbital atomic sphere approximation method (LMTO-ASA). Schottky barrier heights (SBH's) are strongly correlated with the interface atomic structures and are determined mainly by interface bonding states and the screening effect of the semiconductor. Metal-induced gap states (MIGS) are metal wave function tails caused by the Schottky barriers. © 1989.

引用

页码：164 / 168

页数：5

共 14 条

[1]

Andersen O. K., 1986, ELECT BAND STRUCTURE

[2] ILLUSTRATION OF THE LINEAR-MUFFIN-TIN-ORBITAL TIGHT-BINDING REPRESENTATION - COMPACT ORBITALS AND CHARGE-DENSITY IN SI [J].

ANDERSEN, OK ;

PAWLOWSKA, Z ;

JEPSEN, O .

PHYSICAL REVIEW B, 1986, 34 (08) :5253-5269

[3] 1ST PRINCIPLE INVESTIGATION OF THE ELECTRONIC-PROPERTIES OF SILICON-SILICIDE INTERFACES [J].

BISI, O ;

OSSICINI, S .

SURFACE SCIENCE, 1987, 189 :285-293

[4] LMTO-ASA CALCULATIONS ON SI/NISI2 INTERFACES [J].

FUJITANI, H ;

ASANO, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1988, 57 (07) :2253-2256

[5] NEW SILICIDE INTERFACE MODEL FROM STRUCTURAL ENERGY CALCULATIONS [J].

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1988, 60 (04) :313-316

[6] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF TYPE-A AND TYPE-B NISI2 EPILAYERS ON SI [J].

HAUENSTEIN, RJ ;

SCHLESINGER, TE ;

MCGILL, TC ;

HUNT, BD ;

SCHOWALTER, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :860-864

[7] GROUND-STATE THERMOMECHANICAL PROPERTIES OF SOME CUBIC ELEMENTS IN LOCAL-DENSITY FORMALISM [J].

JANAK, JF ;

MORUZZI, VL ;

WILLIAMS, AR .

PHYSICAL REVIEW B, 1975, 12 (04) :1257-1261

[8] ELECTRONIC-STRUCTURE AND PROPERTIES OF NISI2 AND COSI2 IN THE FLUORITE AND ADAMANTANE STRUCTURES [J].

LAMBRECHT, WRL ;

CHRISTENSEN, NE ;

BLOCHL, P .

PHYSICAL REVIEW B, 1987, 36 (05) :2493-2503

[9] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J].

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 13 (06) :2461-2469

[10] ELECTRONIC-STRUCTURE AND PROPERTIES OF COSI2 [J].

MATTHEISS, LF ;

HAMANN, DR .

PHYSICAL REVIEW B, 1988, 37 (18) :10623-10627

← 1 2 →