TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF MECHANICALLY DAMAGED INGAASP-INP DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE

被引：11

作者：

UEDA, O

YAMAKOSHI, S

YAMAOKA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 05期

关键词：

D O I：

10.1143/JJAP.19.L251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L251 / L254

页数：4

共 12 条

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DOBSON, PS ;

OHARA, S ;

NEWMAN, DH .

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[3] DEFECT STRUCTURE OF DEGRADED GAALAS-GAAS DOUBLE HETEROJUNCTION LASERS [J].

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DOBSON, PS .

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[4] DOPING EFFECTS ON RAKE-LINE FORMATION IN LPE GROWTH OF ALXGA1-XAS DH LASERS [J].

LOGAN, RA ;

SCHUMAKER, NE ;

HENRY, CH ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5970-5977

[5] MECHANISM OF OPTICALLY INDUCED DEGRADATION IN INP-IN1-XGAXASYP1-Y HETEROSTRUCTURES [J].

MAHAJAN, S ;

JOHNSTON, WD ;

POLLACK, MA ;

NAHORY, RE .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :717-719

[6] OBSERVATION AND ANALYSIS OF VERY RAPID OPTICAL DEGRADATION OF GAAS-GAALAS DH LASER MATERIAL [J].

MONEMAR, B ;

WOOLHOUSE, GR .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :605-607

[7]

NAKANO Y, 1979, JPN J APPL PHYS, V18, P127

[8] RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3899-3903

[9] DEFECT STRUCTURE OF DEGRADED GA1-XALXAS DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING-DIODES [J].

UEDA, O ;

ISOZUMI, S ;

YAMAKOSHI, S ;

KOTANI, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :765-772

[10]

YAMAKOSHI S, 1979, IEEE IEDM TECH D DEC

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