OBSERVATION AND ANALYSIS OF VERY RAPID OPTICAL DEGRADATION OF GAAS-GAALAS DH LASER MATERIAL

被引：32

作者：

MONEMAR, B ^{[1
]}

WOOLHOUSE, GR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期

关键词：

D O I：

10.1063/1.89159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：605 / 607

页数：3

共 12 条

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HAKKI, BW ;

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ITO, R ;

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :551-556

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KASAMI, A .

APPLIED PHYSICS LETTERS, 1976, 28 (10) :591-592

[4] X-RAY TOPOGRAPHIC OBSERVATION OF DARK-LINE DEFECTS IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS [J].

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CHINONE, N ;

ITO, R .

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[5]

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[6] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

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PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

[7] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS [J].

MATTHEWS, JW ;

MADER, S ;

LIGHT, TB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3800-&

[8]

MATTHEWS JW, DISLOCATIONS SOLIDS, V2

[9]

NEUBERGER M, 1972, HDB ELECTRONIC MATER, V7, P8

[10] NATURE OF OPTICALLY INDUCED DEFECTS IN GA1-XALXAS-GAAS DOUBLE-HETEROJUNCTION LASER STRUCTURES [J].

PETROFF, P ;

JOHNSTON, WD ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :226-228

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