DEFECT-REVEALING ETCHES ON GAAS - A COMPARISON OF THE AHA WITH THE A-B AND KOH ETCHES

被引：7

作者：

WAGNER, WR

GREENE, LI

KOSZI, LI

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 05期

关键词：

D O I：

10.1149/1.2127557

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1091 / 1094

页数：4

共 11 条

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[7]

Richter H., 1974, Kristall und Technik, V9, P1041, DOI 10.1002/crat.19740090909

[8]

Stirland D.J., 1977, I PHYS C SER A, V33, P150

[9] DISLOCATION ETCH-MEMORY EFFECT IN GALLIUM-ARSENIDE [J].

STIRLAND, DJ ;

OGDEN, R .

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[10] REVIEW OF ETCHING AND DEFECT CHARACTERIZATION OF GALLIUM-ARSENIDE SUBSTRATE MATERIAL [J].

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