PROPERTIES OF NOBLE-METAL SILICON JUNCTIONS

被引：43

作者：

CROS, A ^{[1
]}

MURET, P ^{[1
]}

机构：

[1] CNRS,LEPES,F-38042 GRENOBLE,FRANCE

来源：

MATERIALS SCIENCE REPORTS | 1992年 / 8卷 / 6-7期

关键词：

D O I：

10.1016/0920-2307(92)90004-K

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review the properties of noble-metal layers deposited on silicon substrates. The microscopic properties of the interface are presented. The relevance of these results to macroscopic phenomena like diffusion, adherence of the metal layer and electrical properties of the junctions is discussed.

引用

页码：271 / 367

页数：97

共 426 条

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