DIRECT PHOTOETCHING OF POLYMER-FILMS USING VACUUM ULTRAVIOLET-RADIATION GENERATED BY HIGH-ORDER ANTI-STOKES-RAMAN SCATTERING

被引：13

作者：

WADA, S ^{[1
]}

TASHIRO, H ^{[1
]}

TOYODA, K ^{[1
]}

NIINO, H ^{[1
]}

YABE, A ^{[1
]}

机构：

[1] NATL CHEM LAB IND,HIGASHI KU,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.109018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-order anti-Stokes Raman pulses of the vacuum ultraviolet were successfully utilized for ablation of polymer films. Efficient anti-Stokes conversion of the fourth harmonics of a conventional Nd:YAG laser provided fluences as large as 0.4 J/cm2 for a sixth-order anti-Stokes pulse at 160 nm. The selection of irradiation wavelength by a ready choice of scattered orders of Raman waves could verify critical wavelength dependence of ablation effect, which turned out that only the light at 160 nm made it possible to ablate polytetrafluoroethylene (PTFE) film with such low fluences.

引用

页码：211 / 213

页数：3

共 14 条

[1] DIRECT-ETCHING STUDIES OF POLYMER-FILMS USING A 157-NM F2 LASER [J].