学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
LOW-TEMPERATURE PLASMA OXIDATION OF GAAS
被引:43
作者
:
YOKOYAMA, N
论文数:
0
引用数:
0
h-index:
0
YOKOYAMA, N
MIMURA, T
论文数:
0
引用数:
0
h-index:
0
MIMURA, T
ODANI, K
论文数:
0
引用数:
0
h-index:
0
ODANI, K
FUKUTA, M
论文数:
0
引用数:
0
h-index:
0
FUKUTA, M
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1978年
/ 32卷
/ 01期
关键词
:
D O I
:
10.1063/1.89839
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:58 / 60
页数:3
相关论文
共 7 条
[1]
BAYRAKTAROGLU B, 1976, ELECTRON LETT, V12, P54
[2]
PLASMA OXIDATION OF GAAS
[J].
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, RPH
;
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
.
APPLIED PHYSICS LETTERS,
1976,
29
(01)
:56
-58
[3]
DEPLETION-MODE GAAS MOS FET
[J].
LILE, DL
论文数:
0
引用数:
0
h-index:
0
机构:
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
LILE, DL
;
CLAWSON, AR
论文数:
0
引用数:
0
h-index:
0
机构:
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
CLAWSON, AR
;
COLLINS, DA
论文数:
0
引用数:
0
h-index:
0
机构:
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
COLLINS, DA
.
APPLIED PHYSICS LETTERS,
1976,
29
(03)
:207
-208
[4]
THERMAL OXIDATION OF GAAS
[J].
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MURARKA, SP
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:180
-181
[5]
ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION
[J].
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
SAWADA, T
;
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HASEGAWA, H
.
ELECTRONICS LETTERS,
1976,
12
(18)
:471
-472
[6]
OXIDATION OF GAAS1-XPX SURFACE BY OXYGEN PLASMA AND PROPERTIES OF OXIDE FILM
[J].
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,7-3-1 HONGO,BUNKYO 113,TOKYO,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,7-3-1 HONGO,BUNKYO 113,TOKYO,JAPAN
SUGANO, T
;
MORI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,7-3-1 HONGO,BUNKYO 113,TOKYO,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,7-3-1 HONGO,BUNKYO 113,TOKYO,JAPAN
MORI, Y
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(01)
:113
-118
[7]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
[J].
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:285
-299
←
1
→
共 7 条
[1]
BAYRAKTAROGLU B, 1976, ELECTRON LETT, V12, P54
[2]
PLASMA OXIDATION OF GAAS
[J].
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, RPH
;
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
.
APPLIED PHYSICS LETTERS,
1976,
29
(01)
:56
-58
[3]
DEPLETION-MODE GAAS MOS FET
[J].
LILE, DL
论文数:
0
引用数:
0
h-index:
0
机构:
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
LILE, DL
;
CLAWSON, AR
论文数:
0
引用数:
0
h-index:
0
机构:
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
CLAWSON, AR
;
COLLINS, DA
论文数:
0
引用数:
0
h-index:
0
机构:
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
USN,CTR ELECTR LAB,SAN DIEGO,CA 92152
COLLINS, DA
.
APPLIED PHYSICS LETTERS,
1976,
29
(03)
:207
-208
[4]
THERMAL OXIDATION OF GAAS
[J].
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MURARKA, SP
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:180
-181
[5]
ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION
[J].
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
SAWADA, T
;
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HASEGAWA, H
.
ELECTRONICS LETTERS,
1976,
12
(18)
:471
-472
[6]
OXIDATION OF GAAS1-XPX SURFACE BY OXYGEN PLASMA AND PROPERTIES OF OXIDE FILM
[J].
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,7-3-1 HONGO,BUNKYO 113,TOKYO,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,7-3-1 HONGO,BUNKYO 113,TOKYO,JAPAN
SUGANO, T
;
MORI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,7-3-1 HONGO,BUNKYO 113,TOKYO,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,7-3-1 HONGO,BUNKYO 113,TOKYO,JAPAN
MORI, Y
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(01)
:113
-118
[7]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
[J].
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:285
-299
←
1
→