LOW-TEMPERATURE PLASMA OXIDATION OF GAAS

被引:43
作者
YOKOYAMA, N
MIMURA, T
ODANI, K
FUKUTA, M
机构
关键词
D O I
10.1063/1.89839
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:58 / 60
页数:3
相关论文
共 7 条
[1]  
BAYRAKTAROGLU B, 1976, ELECTRON LETT, V12, P54
[2]   PLASMA OXIDATION OF GAAS [J].
CHANG, RPH ;
SINHA, AK .
APPLIED PHYSICS LETTERS, 1976, 29 (01) :56-58
[3]   DEPLETION-MODE GAAS MOS FET [J].
LILE, DL ;
CLAWSON, AR ;
COLLINS, DA .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :207-208
[4]   THERMAL OXIDATION OF GAAS [J].
MURARKA, SP .
APPLIED PHYSICS LETTERS, 1975, 26 (04) :180-181
[5]   ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION [J].
SAWADA, T ;
HASEGAWA, H .
ELECTRONICS LETTERS, 1976, 12 (18) :471-472
[6]   OXIDATION OF GAAS1-XPX SURFACE BY OXYGEN PLASMA AND PROPERTIES OF OXIDE FILM [J].
SUGANO, T ;
MORI, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :113-118