BARRIER HEIGHT OF METAL/INP SCHOTTKY CONTACTS WITH INTERFACE OXIDE LAYER

被引:19
作者
YAMAGISHI, H
机构
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 06期
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D O I
10.1143/JJAP.27.997
中图分类号
O59 [应用物理学];
学科分类号
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页码:997 / 1001
页数:5
相关论文
共 14 条
[1]   PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J].
FISCHER, TE .
PHYSICAL REVIEW, 1966, 142 (02) :519-&
[2]   INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].
FRITZSCHE, D .
ELECTRONICS LETTERS, 1978, 14 (03) :51-52
[3]   ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].
GLEASON, KR ;
DIETRICH, HB ;
HENRY, RL ;
COHEN, ED ;
BARK, ML .
APPLIED PHYSICS LETTERS, 1978, 32 (09) :578-581
[5]   ELECTRICAL CHARACTERISTICS OF THE INSB SCHOTTKY DIODE [J].
HATTORI, K ;
YUITO, M ;
AMAKUSA, T .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (01) :157-164
[6]   INP METAL-INSULATED-SEMICONDUCTOR SCHOTTKY CONTACTS USING SURFACE OXIDE LAYERS PREPARED WITH BROMINE WATER [J].
KAMIMURA, K ;
SUZUKI, T ;
KUNIOKA, A .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4905-4907
[7]   METAL-INSULATOR SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS FABRICATED ON INP [J].
KAMIMURA, K ;
SUZUKI, T ;
KUNIOKA, A .
APPLIED PHYSICS LETTERS, 1981, 38 (04) :259-261
[9]   WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY [J].
MICHAELSON, HB .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4729-4733
[10]  
Rhoderick E.H., 1978, METAL SEMICONDUCTORS