ELECTRICAL CHARACTERISTICS OF THE INSB SCHOTTKY DIODE

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 408 - 414

[2] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 621 - 631

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[4] ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 578 - 581

[5] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[6] GROVE AS, 1967, PHYS TECHNOL S, P281

[7] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW, 1961, 123 (01): : 85 - &

[8] METAL-INSULATOR SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS FABRICATED ON INP [J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 259 - 261

[9] KORENBLIT LL, 1968, FIZ TEKH POLUPROV, V2, P675

[10] THE BARRIER HEIGHT CHANGE AND CURRENT TRANSPORT PHENOMENA WITH THE PRESENCE OF INTERFACIAL LAYER IN MIS SCHOTTKY-BARRIER SOLAR-CELLS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (03) : 263 - 268

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 408 - 414

[2] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 621 - 631

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[4] ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 578 - 581

[5] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[6] GROVE AS, 1967, PHYS TECHNOL S, P281

[7] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW, 1961, 123 (01): : 85 - &

[8] METAL-INSULATOR SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS FABRICATED ON INP [J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 259 - 261

[9] KORENBLIT LL, 1968, FIZ TEKH POLUPROV, V2, P675

[10] THE BARRIER HEIGHT CHANGE AND CURRENT TRANSPORT PHENOMENA WITH THE PRESENCE OF INTERFACIAL LAYER IN MIS SCHOTTKY-BARRIER SOLAR-CELLS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (03) : 263 - 268