ELECTRICAL CHARACTERISTICS OF THE INSB SCHOTTKY DIODE

[11] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 471 - &

[12] METHOD FOR DETERMINING INTERFACIAL PARAMETERS OF MIS SCHOTTKY BARRIERS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (01): : 421 - 427

[13] ORIGIN OF INCREASE IN SCHOTTKY-BARRIER HEIGHT WITH INTERFACIAL OXIDE THICKNESS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4652 - 4652

[14] ELECTRICAL CHARACTERISTICS OF AU-TI-(N-TYPE)INP SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : 1323 - 1328

[15] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &

[16] 15PERCENT EFFICIENT ANTIREFLECTION-COATED METAL-OXIDE-SEMICONDUCTOR SOLAR CELL [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 95 - 98

[17] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH8

[18] LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP [J]. ELECTRONICS LETTERS, 1978, 14 (05) : 125 - 126

[11] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 471 - &

[12] METHOD FOR DETERMINING INTERFACIAL PARAMETERS OF MIS SCHOTTKY BARRIERS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (01): : 421 - 427

[13] ORIGIN OF INCREASE IN SCHOTTKY-BARRIER HEIGHT WITH INTERFACIAL OXIDE THICKNESS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4652 - 4652

[14] ELECTRICAL CHARACTERISTICS OF AU-TI-(N-TYPE)INP SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : 1323 - 1328

[15] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &

[16] 15PERCENT EFFICIENT ANTIREFLECTION-COATED METAL-OXIDE-SEMICONDUCTOR SOLAR CELL [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 95 - 98

[17] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH8

[18] LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP [J]. ELECTRONICS LETTERS, 1978, 14 (05) : 125 - 126