METHOD FOR DETERMINING INTERFACIAL PARAMETERS OF MIS SCHOTTKY BARRIERS

A brief description of the electrical characteristics of MIS Schottky barriers is given. This electrical model of MIS Schottky barriers is applied to determine interfacial parameters: the width of the insulating layer, the average doping density, and the additional capacitances due to localized interfacial states. The control of these parameters is important for the optimization of MIS Schottky solar cells. In particular, various contributions relating to the “excess capacitance”, as introduced by Vasudev et al. are discussed. Applications to Au/n‐InP structures are proposed. An apparent zero bias band bending U bi⋆ is obtained that is greater than the built‐in potential Ubi of the intimate metal–semiconductor contact. A number of different possible interpretations are examined in order to explain this discrepancy. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA