BARRIER HEIGHT STUDY ON AU-INP SCHOTTKY DIODES

被引：3

作者：

HESS, JM

NGUYEN, PH

LEPLEY, B

RAVELET, S

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 46卷 / 01期

关键词：

D O I：

10.1002/pssa.2210460167

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K55 / K59

页数：5

共 15 条

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[8] SCHOTTKY-BARRIER SOLAR-CELL CALCULATIONS [J].

PULFREY, DL ;

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[9] ELECTRICAL CHARACTERISTICS OF AU-TI-(N-TYPE)INP SCHOTTKY DIODES [J].

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[10]

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