OPEN-CIRCUIT VOLTAGE OF MIS SILICON SOLAR-CELLS

[1] IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 206 - 208

[2] ANDERSON WA, TO BE PUBLISHED

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[4] CHARLSON FJ, 1975, J APPL PHYS, V46, P3982

[5] Fonash S. J., 1975, 11th IEEE Photovoltaic Specialists Conference, P376

[6] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[7] OXIDATION OF SI SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3885 - 3887

[8] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 644 - 645

[9] EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 28 (02) : 97 - 98

[10] PECKERAR M, TO BE PUBLISHED

[1] IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 206 - 208

[2] ANDERSON WA, TO BE PUBLISHED

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[4] CHARLSON FJ, 1975, J APPL PHYS, V46, P3982

[5] Fonash S. J., 1975, 11th IEEE Photovoltaic Specialists Conference, P376

[6] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[7] OXIDATION OF SI SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3885 - 3887

[8] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 644 - 645

[9] EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1976, 28 (02) : 97 - 98

[10] PECKERAR M, TO BE PUBLISHED