OXIDATION OF SI SURFACES

被引：24

作者：

HAAS, GA ^{[1
]}

GRAY, HF ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.322133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3885 / 3887

页数：3

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[9] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON
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