PHOTOHOLE-INDUCED RESONANT-TUNNELING OF ELECTRONS IN SELECTIVELY ETCHED SMALL-AREA GAAS/ALAS DOUBLE-BARRIER DIODES

被引：12

作者：

BUHMANN, H

WANG, J

MANSOURI, L

BETON, PH

EAVES, L

HEATH, M

HENINI, M

机构：

[1] Department of Physics, University of Nottingham, Nottingham

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

Semiconductor diodes;

D O I：

10.1016/0038-1101(94)90339-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of light on the low temperature I(V) characteristics of selectively etched small area resonant tunneling diodes (RTD) has been investigated. These diodes have physical dimensions down to 0.5 mum and their design allows easy optical access. Under illumination new sub-threshold peaks appear in I(V). These peaks are also observed in large area diodes, and are found to be strongly influenced by applying a magnetic field their parallel or perpendicular to the plane of the barriers. We show that our results cannot be explained in terms of resonant tunneling of photo-excited holes and propose an explanation based on the Coulombic electron-hole interaction.

引用

页码：973 / 976

页数：4

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