MODIFICATIONS OF THE GALLIUM-ARSENIDE CRYSTAL-SURFACE DURING ANNEALING

被引：4

作者：

MADER, A ^{[1
]}

MEYER, JD ^{[1
]}

BETHGE, K ^{[1
]}

机构：

[1] UNIV FRANKFURT, INST KERNPHYS,AUGUST EULER STR 6, W-6000 FRANKFURT 90, GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 71卷 / 01期

关键词：

D O I：

10.1016/0168-583X(92)95341-N

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Nuclear reaction analysis (NRA) and the channeling technique (RBS(C)) have been used to obtain information about the surface composition and the lattice distortion of gallium arsenide (GaAs) during annealing. The samples were annealed at temperatures up to 600-degrees-C under different gases (air, N2, CO2). Using the nuclear reactions (C(d,p)C)-C-12-C-13 and (O(d,p)O)-O-16-O-17 the quantity of carbon and oxygen at the surface of the GaAs was measured. By means of the channeling technique it is possible to study the lattice damage in the surface region. At the surface of GaAs an addition of oxygen and a reduction of carbon during annealing under air and CO2 is obtained. The results of the channeling data show a disorder in the surface region of samples with increasing concentration of oxygen.

引用

页码：65 / 69

页数：5

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