WHAT CAN BE EXPECTED FROM HIGH-Z SEMICONDUCTOR-DETECTORS

被引：73

作者：

ARMANTROUT, GA ^{[1
]}

SWIERKOWSKI, SP ^{[1
]}

SHEROHMAN, JW ^{[1
]}

YEE, JH ^{[1
]}

机构：

[1] UNIV CALIF,LAWRENCE LIVERMORE LAB,LIVERMORE,CA 94550

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 01期

关键词：

D O I：

10.1109/TNS.1977.4328653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：121 / 125

页数：5

共 25 条

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) :302-304

[19] COMPREHENSIVE MODEL FOR PREDICTING SEMICONDUCTOR DETECTOR PERFORMANCE [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (01) :131-137

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) :205-210

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