INITIAL GENERATION KINETICS OF OXYGEN-RELATED THERMAL DONORS AT 430-DEGREES-C IN SILICON

被引：16

作者：

KAMIURA, Y ^{[1
]}

HASHIMOTO, F ^{[1
]}

ENDO, K ^{[1
]}

机构：

[1] JAPAN SILICON CO LTD,CHIBA 278,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.337919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2478 / 2485

页数：8

共 28 条

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