QUENCHED-IN DEFECTS IN FLASHLAMP-ANNEALED SILICON

被引：18

作者：

BORENSTEIN, JT

JONES, JT

CORBETT, JW

OEHRLEIN, GS

KLEINHENZ, RL

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.97169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：199 / 200

页数：2

共 14 条

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[4]

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[5] HIGHLY PHOTOSENSITIVE TRANSISTORS IN SINGLE-CRYSTAL SILICON THIN-FILMS ON FUSED-SILICA [J].

JOHNSON, NM ;

CHIANG, A .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1102-1104

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

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[7]

LEE YH, 1977, APPL PHYS LETT, V31, P142, DOI 10.1063/1.89630

[8] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

[9]

Pensl G., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P347

[10] ELECTRONICALLY ACTIVE DEFECTS IN CW BEAM-ANNEALED SI .2. DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

SHENG, NH ;

MERZ, JL .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3083-3091

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