ELECTRONICALLY ACTIVE DEFECTS IN CW BEAM-ANNEALED SI .2. DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：16

作者：

SHENG, NH ^{[1
]}

MERZ, JL ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3083 / 3091

页数：9

共 23 条

[1] QUENCHED-IN LEVELS IN P-TYPE SILICON [J].

ELSTNER, L ;

KAMPRATH, W .

PHYSICA STATUS SOLIDI, 1967, 22 (02) :541-&

[2]

FEICHTINGER H, 1979, I PHYS C SER, V46, P528

[3] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J].

GERSON, JD ;

CHENG, LJ ;

CORBETT, JW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4821-4822

[4] THE PROPERTIES OF IRON IN SILICON [J].

GRAFF, K ;

PIEPER, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :669-674

[5]

GRAFF K, 1981, SEMICONDUCTOR SILICO, P331

[6]

HASS W, 1978, J ELECTRON MATER, V7, P525

[7]

Johnson N M., 1980, LASER ELECT BEAM PRO, P423, DOI [10.1016/B978-0-12-746850-1.50063-3, DOI 10.1016/B978-0-12-746850-1.50063-3]

[8] ELECTRONIC DEFECT LEVELS IN SELF-IMPLANTED CW LASER-ANNEALED SILICON [J].

JOHNSON, NM ;

GOLD, RB ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :704-706

[9] DEEP LEVELS IN SCANNED ELECTRON-BEAM ANNEALED SILICON [J].

JOHNSON, NM ;

REGOLINI, JL ;

BARTELINK, DJ ;

GIBBONS, JF ;

RATNAKUMAR, KN .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :425-428

[10]

Kimerling L. C., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P85

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