CORRECTION FACTORS FOR THE DETERMINATION OF OXYGEN IN SILICON BY IR SPECTROMETRY

被引：24

作者：

SCHOMANN, F

GRAFF, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期

关键词：

D O I：

10.1149/1.2097141

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2025 / 2031

页数：7

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[6] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].

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[7]

Hild E., 1985, 1st International Autumn School 1985: Gettering and Defect Engineering in the Semiconductor Technology (GADEST). Proceedings, P264

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[9]

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[10]

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