CRYSTALLOGRAPHIC AND OPTICAL-PROPERTIES OF INP/SI(001) GROWN BY LOW-TEMPERATURE MOCVD PROCESS

被引：4

作者：

GRUNDMANN, M

KROST, A

BIMBERG, D

机构：

[1] Technische Universität Berlin, Institut für Festkörperphysik I, W-1000 Berlin 12

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91085-P

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Growth of antiphase domain free InP on Si(001) is reported using a low temperature metalorganic chemical vapor deposition process without any preannealing of the substrate. The residual stress (typically 6-7 x 10(-4)), the tilt and the optical properties (best spectral broadening FWHM = 3.0 meV) of the InP epilayers are characterized.

引用

页码：47 / 49

页数：3

共 6 条

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