THE PASSIVATION OF GALLIUM-ARSENIDE SURFACES WITH ATOMIC SULFUR

被引：21

作者：

GU, GY

OGRYZLO, EA

WONG, PC

ZHOU, MY

MITCHELL, KAR

机构：

[1] Department of Chemistry, University of British Columbia, Vancouver

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.351808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technique for bonding sulfur atoms to gallium arsenide surfaces is described. In this technique the surface is exposed to gas-phase atomic sulfur at 60-70-degrees-C. The resulting surfaces were characterized by angle-dependent x-ray photoelectron spectroscopy. The data show that, in contrast to passivation of GaAs by H2S at low temperatures, this technique yields a surface on which the sulfur is almost exclusively bonded only to gallium atoms.

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页码：762 / 765

页数：4

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