TEMPERATURE DEPENDENCE OF POWER OUTPUT OF SPONTANEOUS EMISSION FROM GAAS LASER DIODES

被引：12

作者：

WINOGRAD.NN

NEILL, AH

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1970年 / 28卷 / 05期

关键词：

D O I：

10.1080/00207217008900149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：401 / &

共 19 条

[1] RADIATIVE TUNNELING IN GAAS ABRUPT ASYMMETRICAL JUNCTIONS [J].

CASEY, HC ;

SILVERSMITH, DJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :241-+

[2]

CHARKRAVARTI AN, 1968, INT J ELECTRON, V24, P283

[3] EFFECT OF HIGHER ABSORPTION IN NON-LASING GAAS DIODES AT 300 DEGREES K [J].

GONDA, T ;

LAMORTE, MF ;

NYUL, P ;

JUNKER, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (04) :74-+

[4] RECOMBINATIONS VIA DEFECTS IN DEGENERATE SEMICONDUCTORS [J].

HEASELL, EL .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :225-&

[5]

MOLL JL, 1964, PHYSICS SEMICONDUCTO, P120

[6] RECOMBINATION BY TUNNELING IN ELECTROLUMINESCENT RIODES [J].

MORGAN, TN .

PHYSICAL REVIEW, 1966, 148 (02) :890-&

[7] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].

NELSON, DF ;

GERSHENZON, M ;

ASHKIN, A .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184

[8] TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J].

PANKOVE, JI .

PHYSICAL REVIEW LETTERS, 1962, 9 (07) :283-&

[9]

PANKOVE JI, 1966, J PHYS SOC JPN, VS 21, P298

[10]

PANKOVE JI, 1967, RCA REV, V28, P560

← 1 2 →