STUDY OF DEEP IMPURITY LEVELS IN GAAS DUE TO CR AND O BY AC PHOTOCONDUCTIVITY

被引：23

作者：

STOCKER, HJ ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT PHYS & ASTRON,AMHERST,MA 01003

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.323515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4583 / 4586

页数：4

共 11 条

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LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

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STOCKER H, UNPUBLISHED

[9] PHOTOLUMINESCENCE OF CR ACCEPTOR IN BOAT-GROWN AND LPE GAAS [J].

STOCKER, HJ ;

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2450-2451

[10] PROBABLE OBSERVATION OF UNUSUAL LOCAL VIBRATIONAL MODES IN OSCILLATORY PHOTOCONDUCTIVITY OF SEMI-INSULATING GAAS [J].

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SOLID STATE COMMUNICATIONS, 1975, 16 (05) :525-527

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