ATOMIC LAYER EPITAXY OF GAAS USING SOLID ARSENIC AND DEGACL

被引：19

作者：

SASAOKA, C ^{[1
]}

YOSHIDA, M ^{[1
]}

USUI, A ^{[1
]}

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 04期

关键词：

D O I：

10.1143/JJAP.27.L490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L490 / L492

页数：3

共 16 条

[1] OMCVD GROWTH OF GAAS AND ALGAAS USING A SOLID AS SOURCE [J].

BHAT, R .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (04) :433-449

[2] GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE [J].

BHAT, R ;

KOZA, MA ;

SKROMME, BJ .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1194-1196

[3] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH [J].

CHEN, CH ;

LARSEN, CA ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1987, 50 (04) :218-220

[4]

DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[5] ORGANOMETALLIC COMPOUNDS OF GROUP III .2. REACTION OF GALLIUM ALKYLS AND ALKYL HYDRIDES WITH UNSATURATED HYDROCARBONS [J].

EISCH, JJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1962, 84 (20) :3830-&

[6] INSITU MASS-SPECTROSCOPY AND THERMOGRAVIMETRIC STUDIES OF GAAS MOCVD GAS-PHASE AND SURFACE-REACTIONS [J].

LEE, PW ;

OMSTEAD, TR ;

MCKENNA, DR ;

JENSEN, KF .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :165-174

[7] USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS [J].

LUM, RM ;

KLINGERT, JK ;

LAMONT, MG .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :284-286

[8] GAAS GROWTH BY ATOMIC LAYER EPITAXY USING DIETHYLGALLIUMCHLORIDE [J].

MORI, K ;

YOSHIDA, M ;

USUI, A ;

TERAO, H .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :27-29

[9] MOLECULAR LAYER EPITAXY [J].

NISHIZAWA, J ;

ABE, H ;

KURABAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1197-1200

[10] ON THE REACTION-MECHANISM OF GAAS MOCVD [J].

NISHIZAWA, J ;

KURABAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :413-417

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