CONTROL OF MINORITY-CARRIER LIFETIME BY GOLD IMPLANTATION IN SEMICONDUCTOR-DEVICES

被引：9

作者：

COFFA, S ^{[1
]}

CALCAGNO, L ^{[1
]}

CAMPISANO, SU ^{[1
]}

CALLERI, G ^{[1
]}

FERLA, G ^{[1
]}

机构：

[1] SGS MICROELETTR,CATANIA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期

关键词：

Semiconducting Silicon--Charge Carriers - Semiconductor Device Manufacture - Semiconductor Materials--Electric Properties;

D O I：

10.1149/1.2097180

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Silicon wafer and devices have been implanted with gold ions and thermally processed in the 1073-1243 K temperature range. Resistivity profiles, leakage currents in p-n junctions, and recombination lifetime have been measured as a function of the Au-implanted dose, annealing temperature, and time. The use of ion implantation for the predeposition of the Au atoms allows a good control of the lifetime in a rather wide range of values. In addition, it is shown that it is very easy to generate flat gold profiles across the silicon wafers.

引用

页码：2073 / 2075

页数：3

共 9 条

[1] COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS
BALIGA, BJ
SUN, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 685 - 688
[2] CAMPERO AM, 1984, J ELECTROCHEM SOC, V131, P655
[3] CARLSON RO, 1977, IEEE T ELECTRON DEV, V8, P1103
[4] ENTROPY FACTOR OF DONOR LEVEL IN GOLD IMPLANTED SILICON
COFFA, S
CALLERI, G
CALCAGNO, L
CAMPISANO, SU
FERLA, G
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 558 - 560
[5] COFFA S, 1988, J APPL PHYS, V11
[6] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON
GOSELE, U
FRANK, W
SEEGER, A
[J]. APPLIED PHYSICS, 1980, 23 (04): : 361 - 368
[7] OPEN CIRCUIT VOLTAGE DECAY IN P-N-JUNCTION DIODES AT HIGH-LEVELS OF INJECTION
JAIN, SC
RAY, UC
MURALIDHARAN, R
TEWARY, VK
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (05) : 561 - 570
[8] CONTROLLED GOLD DOPING OF SILICON BY USING ION-IMPLANTATION
SCHULZ, M
GOETZBERGER, A
FRANZ, I
LANGHEINRICH, W
[J]. APPLIED PHYSICS, 1974, 3 (04): : 275 - 280
[9] MINORITY-CARRIER LIFETIME AND DEFECT STRUCTURE IN SILICON AFTER CESIUM IMPLANTATION
SIXT, G
KAPPERT, H
SCHWUTTKE, GH
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 43 (01): : 119 - 131

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