NITROGEN RADICAL DOPING DURING METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE

被引：9

作者：

MORIMOTO, K

FUJINO, T

机构：

[1] Research Institute for Advanced Science and Technology, University of Osaka Prefecture, Sakai, Osaka 593

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 17期

关键词：

D O I：

10.1063/1.110482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The availability of nitrogen radical doping in low-pressure metalorganic vapor phase epitaxy of N-doped ZnSe layers is reported. Active nitrogen generated by low-frequency dielectric discharge was supplied alternately with source materials. The narrow and distinct peak for the acceptor-bound exciton, together with donor-acceptor pair peaks, is predominant in the low-temperature cathodoluminescence spectra for the layers prepared with alternate growth and doping.

引用

页码：2384 / 2386

页数：3

共 23 条

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