PHOSPHORUS ACCEPTOR LEVELS IN ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：83

作者：

YAO, T

OKADA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 06期

关键词：

D O I：

10.1143/JJAP.25.821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：821 / 827

页数：7

共 23 条

[1] SOLUTION GROWTH OF II-VI COMPOUNDS
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WASHIYAMA, M
NAKAMURA, H
SAKAMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 11 - 17
[2] SOME ELECTRICAL AND OPTICAL PROPERTIES OF ZNSE
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MARPLE, DTF
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[3] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 15 - 26
[4] OPTICALLY-DETECTED MAGNETIC-RESONANCE OF THE PSE-CENTER IN ZNSE
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NICHOLLS, JE
[J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 322 - 326
[5] EXCITONS AND ABSORPTION EDGE IN ZNSE
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MARPLE, DTF
AVEN, M
SEGALL, B
[J]. PHYSICAL REVIEW, 1967, 156 (03): : 850 - &
[6] SHALLOW ACCEPTORS AND P-TYPE ZNSE
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BHARGAVA, RN
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 194 - 196
[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[8] ELECTRON EFFECTIVE MASS IN ZNSE
MARPLE, DTF
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1879 - +
[9] INJECTION ELECTROLUMINESCENCE IN PHOSPHOROUS-ION-IMPLANTED ZNSE P-N-JUNCTION DIODES
PARK, YS
SHIN, BK
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1444 - 1446
[10] PHOSPHORUS AND ARSENIC IMPURITY CENTERS IN ZNSE .2. OPTICAL AND ELECTRICAL PROPERTIES
REINBERG, AR
HOLTON, WC
DEWIT, M
WATTS, RK
[J]. PHYSICAL REVIEW B, 1971, 3 (02): : 410 - &

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