MODEL FOR NL10 THERMAL DONORS FORMED IN ANNEALED OXYGEN-RICH SILICON-CRYSTALS

被引:22
作者
HARA, A
AOKI, M
KOIZUKA, M
FUKUDA, T
机构
[1] Fujitsu Laboratories Limited, Atsugi 243-01
关键词
D O I
10.1063/1.356187
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron spin resonance (ESR) studies have shown that NL10 thermal donors are formed in oxygen-rich silicon (Si) crystals after annealing. In initial NL10 formation stage, it has C(2v) symmetry with the principle g values g[100]= 1.99982, g[011BAR]= 1.99799, g[011]= 1.99946. After annealing, however, we could detect ESR signals with g values close to those of NL10 in nitrogen-doped oxygen-rich Si crystals. The ESR signals corresponded to nitrogen-oxygen complex donors [D(N,O)s]. We studied the similarities between D(N,O)s and NL10 centers with C2v symmetry. We propose a model for NL10 thermal donors that NL10 with C2v symmetry is D(N,O). Our model clearly explains NL10 thermal donors characteristics.
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页码:2929 / 2935
页数:7
相关论文
共 35 条
[1]  
AMMERLAAN CAJ, 1993, MATER SCI FORUM, V117, P9, DOI 10.4028/www.scientific.net/MSF.117-118.9
[2]  
AMMERLAAN CAJ, 1993, MATERIAL SCI FORUM, V118
[3]   ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF HEAT-TREATMENT CENTERS IN N-TYPE SILICON [J].
BEKMAN, HHPT ;
GREGORKIEWICZ, T ;
VANWEZEP, DA ;
AMMERLAAN, CAJ .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4404-4405
[4]   SI-NL10 - PARAMAGNETIC ACCEPTOR STATE OF THE SILICON THERMAL DONOR [J].
BEKMAN, HHPT ;
GREGORKIEWICZ, T ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (02) :227-230
[5]   SILICON ELECTRON-NUCLEAR DOUBLE-RESONANCE STUDY OF THE NL10 HEAT-TREATMENT CENTER [J].
BEKMAN, HHPT ;
GREGORKIEWICZ, T ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW B, 1989, 39 (03) :1648-1658
[6]  
Claybourn M., 1989, Materials Science Forum, V38-41, P613, DOI 10.4028/www.scientific.net/MSF.38-41.613
[7]   OXYGEN INCORPORATION IN THERMAL-DONOR CENTERS IN SILICON [J].
GREGORKIEWICZ, T ;
VANWEZEP, DA ;
BEKMAN, HHPT ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1702-1705
[8]   COMPARATIVE-STUDY OF SI-NL8 AND SI-NL10 THERMAL-DONOR-RELATED EPR CENTERS [J].
GREGORKIEWICZ, T ;
BEKMAN, HHPT ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW B, 1990, 41 (18) :12628-12637
[9]   MICROSCOPIC STRUCTURE OF THE NL10 HEAT-TREATMENT CENTER IN SILICON - STUDY BY ELECTRON-NUCLEAR DOUBLE-RESONANCE [J].
GREGORKIEWICZ, T ;
BEKMAN, HHPT ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW B, 1988, 38 (06) :3998-4015
[10]   ALUMINUM INCORPORATION IN THE SI-NL10 THERMAL DONOR [J].
GREGORKIEWICZ, T ;
BEKMAN, HHPT ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW B, 1992, 46 (08) :4582-4589