PRIMARY AND SECONDARY CRYSTALLIZATION PROCESSES OF WSE2 FILMS

被引：7

作者：

BERNEDE, JC

BENHIDA, S

机构：

[1] Faculté des Sciences et des Techniques, Laboratoire de Physique des Matériaux pour l'Electronique, Nantes Cédex 02, 44072, 2, rue de la Houssinière

来源：

JOURNAL OF MATERIALS SCIENCE | 1994年 / 29卷 / 22期

关键词：

D O I：

10.1007/BF00366881

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

WSe2, thin films are obtained by annealing tungsten and selenium constituents in thin-film form, under selenium pressure. Thin films have been investigated by X-ray analysis, scanning and transmission electron microscopy, and by microprobe analysis, Annealing temperature and time were used as parameters. It is shown that stoichiometric thin films, crystallized in the hexagonal structure, are systematically obtained. The grain-size evolution with increasing temperature and/or annealing time is interpreted in terms of primary and second crystallization processes (crystallization and recrystallization).

引用

页码：5972 / 5974

页数：3

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