INTERFACIAL STABILITY AND INTERMIXING IN THIN-LAYER SI(N)/GE(N) SUPERLATTICES

被引：20

作者：

KELIRES, PC ^{[1
]}

机构：

[1] RES CTR CRETE,GR-71110 IRAKLION,GREECE

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.49.11496

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using energies obtained from empirical-potential calculations, we study the relative stability between abrupt, ordered, and randomized interfaces in thin-layer superlattices. For most of the substrate parameter values, both ordered and randomized layers are more stable than the abrupt interface. The ordered geometries have even lower formation enthalpies than random structures. We examine the implications of these results in view of experimental studies of annealing and interdiffusion.

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页码：11496 / 11499

页数：4

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