LASER-INDUCED OXIDATION OF THE SI(111) SURFACE

被引：14

作者：

CROS, A ^{[1
]}

SALVAN, F ^{[1
]}

DERRIEN, J ^{[1
]}

机构：

[1] UNIV HAUTE ALSACE,INST SCI EXACTES & APPL,F-68093 MULHOUSE,FRANCE

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 28卷 / 04期

关键词：

D O I：

10.1007/BF00618701

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：241 / 245

页数：5

相关论文

共 18 条

[1] ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE SI-SIO2 INTERFACE
ADACHI, T
HELMS, CR
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 199 - 201
[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
AUSTON, DH
SURKO, CM
VENKATESAN, TNC
SLUSHER, RE
GOLOVCHENKO, JA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440
[3] EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY
CARRIERE, B
DEVILLE, JP
[J]. SURFACE SCIENCE, 1979, 80 (01) : 278 - 286
[4] COMMANDRE M, UNPUB
[5] COMMANDRE M, 1981, SPRINGER SERIES ELEC, V7, P68
[6] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES
IBACH, H
ROWE, JE
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1951 - 1957
[7] INVESTIGATION OF SILICON-OXYGEN INTERACTIONS USING AUGER ELECTRON SPECTROSCOPY
JOYCE, BA
NEAVE, JH
[J]. SURFACE SCIENCE, 1971, 27 (03) : 499 - &
[8] CORE AND VALENCE ELECTRON EXCITATIONS OF AMORPHOUS SILICON-OXIDE AND SILICON-NITRIDE STUDIED BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY
LIESKE, N
HEZEL, R
[J]. THIN SOLID FILMS, 1979, 61 (02) : 217 - 228
[9] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
LO, HW
COMPAAN, A
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607
[10] OXIDATION OF CLEAN GE AND SI SURFACES
LUDEKE, R
KOMA, A
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (18) : 1170 - 1173