AN IMPROVED ETCHED BURIED HETEROSTRUCTURE LASER WITH REDUCED THRESHOLD CURRENT

被引：4

作者：

AYABE, M

MATSUDA, O

DOSEN, M

SANTA, S

WATANABE, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：399 / 402

页数：4

共 10 条

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[4] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

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[6] LIQUID-PHASE EPITAXIAL-GROWTH OF GA1-XALXAS ON CHANNELED SUBSTRATES [J].

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ITO, R .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :252-256

[7] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS [J].

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4578-4589

[8] TERRACED-SUBSTRATE GAAS-(GAAL)AS INJECTION-LASERS [J].

SUGINO, T ;

WADA, M ;

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APPLIED PHYSICS LETTERS, 1979, 34 (04) :270-272

[9] LATERAL-CURRENT CONFINEMENT IN A GAAS PLANAR STRIPE-GEOMETRY AND CHANNELED SUBSTRATE BURIED DH LASER USING REVERSE-BIASED P-N-JUNCTIONS [J].

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LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2629-2638

[10] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS [J].

TSUKADA, T .

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