ANOMALOUS NOISE BEHAVIOR OF JUNCTION-GATE FIELD-EFFECT TRANSISTOR AT LOW TEMPERATURES

被引：24

作者：

KLAASSEN, FM

ROBINSON, JR

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1970年 / ED17卷 / 10期

关键词：

D O I：

10.1109/T-ED.1970.17086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：852 / +

页数：1

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