DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR-DEVICES WITH APPLICATION TO MODELING TRENCH-DRAM CELLS

Challenges to a robust and accurate implementation of electric-field-enhanced thermal-generation mechanisms in a drift-diffusion-based semiconductor-device simulation code are discussed and solutions proposed. The implementation of the physical models and associated numerical methods is applied to the simulation of leakage currents in trench-DRAM cells.