MODELING ELECTROMIGRATION-INDUCED STRESS EVOLUTION IN CONFINED METAL LINES

被引:78
作者
CLEMENT, JJ [1 ]
THOMPSON, CV [1 ]
机构
[1] MIT, DEPT MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA
关键词
D O I
10.1063/1.360281
中图分类号
O59 [应用物理学];
学科分类号
摘要
A model for stress evolution in confined metal interconnects due to electromigration was proposed recently by M. A. Korhonen, P. Borgesen, K. N. Tu, and C.-Y. Li [J. Appl. Phys. 73, 3790 (1993)], in which interconnect failure is associated with the buildup of stress to a critical level. We show that the analytic solution for a semi-infinite line with a blocking boundary given by Korhonen et al. is a good approximation only when the stress buildup is small. This is not usually the case for narrow, encapsulated interconnect lines in which the electromigration-induced stress can be quite high prior to failure. A complete model description and a more accurate analytic solution to the differential equations describing the electromigration-induced stress buildup at a blocking boundary is presented. © 1995 American Institute of Physics.
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页码:900 / 904
页数:5
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