STRESS EVOLUTION DUE TO ELECTROMIGRATION IN CONFINED METAL LINES

被引：582

作者：

KORHONEN, MA ^{[1
]}

BORGESEN, P ^{[1
]}

TU, KN ^{[1
]}

LI, CY ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.354073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.

引用

页码：3790 / 3799

页数：10

共 37 条

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