SILICON SOLAR-CELLS FABRICATED BY ION-IMPLANTATION AND LASER ANNEALING

被引：6

作者：

ITOH, H ^{[1
]}

TAMURA, H ^{[1
]}

MIYAO, M ^{[1
]}

WARABISAKO, T ^{[1
]}

ITOH, K ^{[1
]}

SASAKI, Y ^{[1
]}

机构：

[1] GUNMA UNIV,FAC TECHNOL,KIRYU,GUMMA 367,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S2.55

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：55 / 60

页数：6

共 8 条

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MAYER, JW ;

SIGMON, TW .

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[2]

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[3] ELECTRONIC DEFECT LEVELS IN SELF-IMPLANTED CW LASER-ANNEALED SILICON [J].

JOHNSON, NM ;

GOLD, RB ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :704-706

[4] EPR OF A CARBON-OXYGEN-DIVACANCY COMPLEX IN IRRADIATED SILICON [J].

LEE, YH ;

CORBETT, JW ;

BROWER, KL .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 41 (02) :637-647

[5]

MULLER JC, 1978, 13TH P IEEE PHOT SPE, P771

[6]

NARAYAN J, 1978, 1978 P LAST EFF ION, P213

[7] SINGLE PULSE LASER ANNEALING OF A DOUBLE-IMPLANTED LAYER [J].

OHKURA, M ;

NATSUAKI, N ;

TAMURA, M ;

TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L83-L86

[8]

WANG KL, 1979, 1978 P S LAS SOL INT, P569

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