ANALYSIS OF RECOMBINATION ACTIVITY OF NISI2 PLATELETS IN SI

被引：16

作者：

KITTLER, M

SEIFERT, W

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1995年 / 150卷 / 01期

关键词：

D O I：

10.1002/pssa.2211500140

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An analysis of EBIC contrast measurements at individual NiSi2 particles in n-type silicon is presented. From the dependence of contrast on temperature and beam current, it is concluded that potential barriers control the recombination activity of the particles. Data deduced from the experiment are compared to the behaviour expected from theory.

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页码：463 / 470

页数：8

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